Time‐resolved x‐ray monitoring of laser ablation of and plasma formation from Si
作者:
H. van Brug,
K. Murakami,
F. Bijkerk,
M. J. van der Wiel,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 10
页码: 3438-3443
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337593
出版商: AIP
数据来源: AIP
摘要:
We present x‐ray absorption measurements on silicon clusters and silicon plasmas produced by pulsed laser irradiation of bulk silicon. The results are compared with earlier time‐resolved x‐ray absorption measurements on amorphous silicon foils under pulsed laser irradiation. Clusters are formed at an irradiance as low as 3.0 J/cm2. At an irradiance of 14 J/cm2ionized species up to Si4+are formed. We find a removed Si layer thickness of 80 A˚ at an irradiance of ≊6 J/cm2, at 15 ns pulse duration.
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