Growth of device quality GaN at 550 °C by atomic layer epitaxy
作者:
N. H. Karam,
T. Parodos,
P. Colter,
D. McNulty,
W. Rowland,
J. Schetzina,
N. El‐Masry,
Salah M. Bedair,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 1
页码: 94-96
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115519
出版商: AIP
数据来源: AIP
摘要:
GaN single crystal films were grown by atomic layer epitaxy at 550 °C. The room temperature photoluminescence properties of these low‐temperature‐grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000 °C. The as‐grown films have background‐carrier concentrations that can be controlled to levels in the 1016/cm−3range. Atomic layer epitaxy is therefore a good approach to the low temperature growth of nitride compounds. ©1995 American Institute of Physics.
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