Formation of Mo/Si contacts by implantation of phosphorus ions was studied. The implantation was carried out at temperatures of −196, 25, and 150 °C and a fluence ranging between 1015and 1017ions cm−2. The morphological and structural characterizations were done with scanning electron microscopy, transmission electron microscopy, and x‐ray diffraction. Hexagonal MoSi2phase was identified in samples implanted with more than 1016ions cm−2at all three implantation temperatures. Traces of MoP were found in the sample implanted with 1017ions cm−2at 150 °C. Measured effective contact resistance showed ohmic behavior in as‐implanted samples except for samples implanted with 1015ions cm−2at 150 °C. Smooth surfaces of implanted MoSi2structures remained after post‐implant annealing at 850 °C for 1/2 h in H2ambient. The effect of post‐implant annealing is also discussed in terms of doping, microstucture, and contact resistance.