An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2system. Irradiation with a mercury‐xenon (Hg‐Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2at 730 °C with Hg‐Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.