Thin films of Al, Pb, Bi, and Sn representing a range of bulk crystal structures and low‐melting‐point metals were vacuum‐vapor deposited onto air‐cleaved (001) NaCl substrates in the presence of dc electric fields applied in the plane of the deposit (using detached electrodes) ranging between 102and 103V/cm even considering displacement current effects during evaporation. Such experiments, conducted at room temperature (25 °C) within short vaporization periods in order to avoid thermal‐induced enhancement of bulk and surface conductivities in the NaCl substrate, and time‐dependent gradient losses, showed no significant or detectable effects on residual microstructures or crystal structure upon examination and comparison of representative film samples that have an approximate thickness of 1200 A by transmission electron microscopy.