Low‐temperature laser deposition of tungsten by silane‐ and disilane‐assisted reactions
作者:
J. G. Black,
S. P. Doran,
M. Rothschild,
D. J. Ehrlich,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 11
页码: 1072-1074
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102569
出版商: AIP
数据来源: AIP
摘要:
A reaction, based on tungsten hexafluoride chemically reduced by silicon hydride vapors, has been developed for low‐temperature laser deposition of high‐purity tungsten. Compared to previous tungsten deposition methods, the new (pyrolytic) process requires very little thermal energy for initiation and propagation of the scanned reaction. WF6and SiH4(or Si2H6) mixtures have been optimized to yield tungsten interconnect lines with abrupt square cross section and conductivities of 12–25 &mgr;&OHgr; cm. Impurity levels are below the detection limits of Auger spectroscopy. Lines 3–20 &mgr;m in width and 0.1–4 &mgr;m in thickness are written at scan speeds of ∼100 &mgr;m/s. Argon‐ion laser powers (488 nm) are typically 30–60 mW, corresponding to reaction temperatures sufficiently low for direct writing on polyimide dielectrics.
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