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Climb‐Barrier to Dislocation Glide in fcc Crystals

 

作者: J. P. Hirth,  

 

期刊: Journal of Applied Physics  （AIP Available online 1962）
卷期: Volume 33, issue 7  

页码: 2286-2289

 

ISSN:0021-8979

 

年代: 1962

 

DOI:10.1063/1.1728946

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A dislocation interaction in fcc crystals is considered which yields a barrier dislocation extended in the glide direction. The barrier consists of a high‐energy stacking fault bounded by two partial dislocations. The barrier stability is discussed in relation to both work hardening and quench hardening.

 

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