Aninsituobservation of the growth kinetics and stress relaxation Pd2Si thin films on Si(111)
作者:
G. E. White,
Haydn Chen,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 8
页码: 3689-3692
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345325
出版商: AIP
数据来源: AIP
摘要:
The growth of the Pd2Si thin fllms on Si(111) substrates has been monitored by aninsitux‐ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 °C. A familiar parabolic growth rate was found, confirming the diffusion‐controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd2Si fllm was observed when the reaction temperature exceeds 200 °C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
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