Carrier transport properties of (ZnS)3(ZnSe)42ordered and ZnS0.07Se0.93disordered alloys are studied. Iodine‐doped ZnS0.07Se0.93was grown by hydrogen radical‐enhanced chemical vapor deposition at a low temperature of 200 °C. These iodine‐doped ZnS0.07Se0.93are characterized by sharp x‐ray diffraction peaks and dominant blue band‐edge emissions in photoluminescence spectra. It was found that (ZnS)3(ZnSe)42ordered alloys show higher electron mobility over 100 cm2/V s than that of ZnS0.07Se0.93disordered alloys at a low electron concentration of ∼1016cm−3, even though these crystals have the same sulfur composition and crystallinity. This mobility enhancement in the ordered alloys is attributed to the elimination of ‘‘disorder scattering’’ originated from random atomic fluctuations in the disordered alloys. Carrier scattering mechanisms and donor activation processes in the ordered and disordered alloys were further determined by a temperature dependence of Hall measurement. ©1996 American Institute of Physics.