首页   按字顺浏览 期刊浏览 卷期浏览 Observation of chemical shifts ofSi 2plevel by an x-ray photoelectron spectrosco...
Observation of chemical shifts ofSi 2plevel by an x-ray photoelectron spectroscopy system with a laser-plasma x-ray source

 

作者: Hiroyuki Kondo,   Toshihisa Tomie,   Hideaki Shimizu,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 21  

页码: 2668-2670

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121093

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An x-ray photoelectron spectroscopy system with a laser-plasma x-ray source is shown to have energy resolution high enough to observe chemical shifts ofSi 2pelectrons inSiO2,Si3N4,and pure Si. A boron nitride (BN) plasma x-ray source is produced by irradiation of 100 mJQ-switched YAG laser pulses. A single line emission at 4.86 nm is selected from the BN plasma by means of carbon foils. Fine spectra are acquired with only 96 laser shots. The results obtained confirm that a laboratory-sized x-ray photoelectron spectroscopy system with submicron spatial resolution and high spectral acquisition speed can be realized. ©1998 American Institute of Physics.

 

点击下载:  PDF (64KB)



返 回