Observation of chemical shifts ofSi 2plevel by an x-ray photoelectron spectroscopy system with a laser-plasma x-ray source
作者:
Hiroyuki Kondo,
Toshihisa Tomie,
Hideaki Shimizu,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 21
页码: 2668-2670
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121093
出版商: AIP
数据来源: AIP
摘要:
An x-ray photoelectron spectroscopy system with a laser-plasma x-ray source is shown to have energy resolution high enough to observe chemical shifts ofSi 2pelectrons inSiO2,Si3N4,and pure Si. A boron nitride (BN) plasma x-ray source is produced by irradiation of 100 mJQ-switched YAG laser pulses. A single line emission at 4.86 nm is selected from the BN plasma by means of carbon foils. Fine spectra are acquired with only 96 laser shots. The results obtained confirm that a laboratory-sized x-ray photoelectron spectroscopy system with submicron spatial resolution and high spectral acquisition speed can be realized. ©1998 American Institute of Physics.
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