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Impact ionization coefficients in Si1−xGex

 

作者: J. Lee,   A. L. Gutierrez‐Aitken,   S. H. Li,   P. K. Bhattacharya,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 2  

页码: 204-205

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113134

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have measured the electron and hole impact ionization coefficients in Si1−xGexalloys. Carrier multiplication measurements were made on relaxed Si1−xGex/Si diodes grown by gas source molecular beam epitaxy. The hole to electron impact ionization coefficient ratio, &bgr;/&agr;, varies from 0.3 to 4 in the composition range ofx=0.08–1.0. ©1995 American Institute of Physics.

 

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