Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
作者:
Anthony I. Chou,
Kafai Lai,
Kiran Kumar,
Prasenjit Chowdhury,
Jack C. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 25
页码: 3407-3409
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119186
出版商: AIP
数据来源: AIP
摘要:
Stress-induced leakage current (SILC) in ultrathin oxide metal–oxide–semiconductor devices has been quantitatively modeled by the trap-assisted tunneling mechanism. These results are compared with experimental data on samples with oxide thickness ranging from 40 to 80 Å. This model accurately describes the electric-field dependence of SILC, and also predicts the increase, then decrease in SILC, with decreasing oxide thickness, which is observed experimentally. ©1997 American Institute of Physics.
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