A metal on polymer (MOP) mask technology is described which may be used for delineating ion implantation and proton bombardment regions. The MOP implant mask technique offers the high resolution patterning capabilities of metal liftoff yet may be removed in organic solvents. The high temperature polymer used showed no evidence of flow after an As implant dose of 1015cm−2at 150 kV. Several MOP lithographic schemes are suggested to meet a variety of implantation requirements. MOP implant masks may be of particular interest for compound semiconductors or electro‐optic materials where native oxides are not generally used for implant masking.