Radio‐frequency sputtering has been used to deposit films of intermetallic binary systems (AxBy) in which the composition varies continuously from about 10 at.% to 80 at.% for theBconstituent. Within this composition range the following &bgr;‐tungsten structured compounds were obtained: V3Si, Nb3Sn, Nb3Pt, Nb3Au, Nb3Al, Nb3Ge, and Ta3Ge. For films with thickness ranging from 3000 to 10 000 Å values ofTcwere observed which were within 1°K of previously reported best bulk values. In the case of Ta3Ge a new &bgr;‐W superconductor has been found with aTcof about 8°K.