Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine
作者:
M. I. Abdalla,
D. G. Kenneson,
W. Powazinik,
E. S. Koteles,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 494-496
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103631
出版商: AIP
数据来源: AIP
摘要:
We report the growth by low‐pressure metalorganic vapor phase epitaxy of lattice‐matched InGaAs on InP substrates using tertiarybutylarsine as the arsenic source. The grown layers are uniform in composition and are consistentlyntype with low background carrier concentrations (2–3×1015/cm3). Room‐temperature mobility as high as 11 200 cm2/V s with a corresponding 77 °K mobility of 57 000 cm2/V s are measured. Photoluminescence gave a strong narrow peak with a full width half maximum=3.1 meV, with no evidence of carbon incorporation.
点击下载:
PDF
(274KB)
返 回