In this letter, we report fabrication of pulsed‐shaped phosphorus doping profiles in Si, using a XeCl (&lgr;=380 nm) pulsed excimer laser. Phosphorus buried layers as shallow as 750 A˚ and as deep as 3200 A˚, with peak full width at half‐maximums as narrow as 100 A˚ and as broad as 900 A˚ are demonstrated. It is also demonstrated that the sample is free of point defects and full electrical activation is achieved by using a rapid thermal anneal at 800 °C for 30 s after the laser processing. This process, we demonstrate, afford simplicity, versatility, and independent control over the depth, width, and height of the phosphorus buried layer. Phosphorus buried layers have potential application in the fabrication of metal–oxide–semiconductor field effect transistors and BiPOLAR electronic devices. ©1996 American Institute of Physics.