首页   按字顺浏览 期刊浏览 卷期浏览 HgSe, a highly electronegative stable metallic contact for semiconductor devices
HgSe, a highly electronegative stable metallic contact for semiconductor devices

 

作者: J. S. Best,   J. O. McCaldin,   T. C. McGill,   C. A. Mead,   J. B. Mooney,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 7  

页码: 433-434

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89109

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Schottky barriers formed by the highly electronegative substance HgSe onn‐ZnS and onn‐ZnSe have been characterized by capacitance‐voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on thesen‐type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.

 

点击下载:  PDF (158KB)



返 回