The new Pt silicide formation method using the reaction between Pt film and SiH4has been proposed. It has been found that Pt silicide is formed by the reaction with SiH4at a low temperature range of 250–400 °C. Parabolic relationships of silicide growth using the reaction with SiH4as well as the growth using the reaction between Pt and substrate Si are confirmed. Pt silicide formation with SiH4is less influenced by oxygen contamination than the formation by the reaction between Pt and substrate Si.