Low‐pressure growth of ZnTe by Ar laser‐assisted metalorganic vapor phase epitaxy
作者:
Hiroshi Ogawa,
Mitsuhiro Nishio,
Makoto Ikejiri,
Hideyuki Tuboi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2384-2386
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104878
出版商: AIP
数据来源: AIP
摘要:
The effect of Ar laser irradiation upon ZnTe homoepitaxial growth has been investigated in low‐pressure metalorganic vapor phase epitaxy. Dimethylzinc and diethyltelluride were used as source materials. The growth rate of the ZnTe layer was greatly enhanced by irradiating vertically onto the (100) substrate. Photoluminescence measurements revealed that the quality of the layer is improved by the irradiation. Diethyltelluride is effectively decomposed on the surface by the irradiation.
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