Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging
作者:
A. K. Chin,
R. Caruso,
M. S. S. Young,
A. R. Von Neida,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 5
页码: 552-554
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95293
出版商: AIP
数据来源: AIP
摘要:
Miyazawaetal. [Appl. Phys. Lett.43, 853 (1983)] have recently established a spatial correlation between variations in field‐effect transistor performance and nonuniformities in the cathodoluminescence (CL) efficiency of semi‐insulating (SI) GaAs substrates. In this study, we compare the CL uniformity of both Cr‐doped and undoped SI GaAs crystals grown by the liquid‐encapsulated Czochralski (LEC) technique with undoped SI crystals grown by the horizontal gradient freeze (HGF) technique. In contrast to the LEC crystals, HGF GaAs has extremely uniform CL characteristics which should result in uniform device performance.
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