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Some doping results in ZnSe grown by molecular beam epitaxy

 

作者: L. K. Li,   W. I. Wang,   J. M. Gaines,   J. Petruzzello,   T. Marshall,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1197-1199

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587042

 

出版商: American Vacuum Society

 

关键词: ZINC SELENIDES;NITROGEN ADDITIONS;ARSENIC ADDITIONS;CRYSTAL DOPING;MOLECULAR BEAM EPITAXY;CV CHARACTERISTIC;PHOTOLUMINESCENCE;EXCITONS;DEFECT STATES;ZnSe:N;ZnSe:Aa

 

数据来源: AIP

 

摘要:

Comparison studies of N‐doping of ZnSe for (100) and (311)A orientations have been performed. TheC–Vmeasurements indicated that the doping level of the samples grown on (311)A is higher than that of the samples on (100). Doping experiments using Zn3As2as As‐doping source evaporated by a Knudsen effusion cell also have been performed. Low‐temperature photoluminescence measurements revealed evidence of shallow acceptor bound excitons, indicating that some of the As is being incorporated as shallow levels. It is also pointed out that group V monomers such as As and P are promisingp‐type dopants.

 

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