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Thin‐film (Pb,Sn)Se photodiodes for 8–12‐&mgr;m operation

 

作者: D. K. Hohnke,   H. Holloway,   K. F. Yeung,   M. Hurley,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 2  

页码: 98-100

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88983

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photodiodes have been made from thin films ofp‐type (Pb,Sn)Se on BaF2substrates. Surface inversion using Pb barriers has given devices with D* (10.1 &mgr;m) ≳5×1010cm Hz1/2 W−1andD* (11.5 &mgr;) ≳2×1010cm Hz1/2 W−1at 77 K with zero‐bias resistance‐area products up to 2 &OHgr; cm2. Quantum efficiencies of the best devices were about 0.5.

 

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