X‐Ray Electron Charge Density Distribution in Silicon
作者:
U. Pietsch,
V. G. Tsirelson,
R. P. Ozerov,
期刊:
physica status solidi (b)
(WILEY Available online 1986)
卷期:
Volume 137,
issue 2
页码: 441-447
ISSN:0370-1972
年代: 1986
DOI:10.1002/pssb.2221370204
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractDuring the last two years new highly accurate X‐ray structure amplitudes for silicon are published. Also the scattering phases of some „forbidden”︁ reflections are determined using the X‐ray threebeam case. This allows the construction of most precise valence and difference electron density plots and the comparision with those calculated on the basis of the Aldret‐Hart X‐ray pendellösung data and by theory. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference densi
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