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Angular distributions of photons emitted by high-energy electrons passing through a silicon single crystal

 

作者: V.I. Kasilov,   N.I. Lapin,   S.F. Shcherbak,  

 

期刊: Radiation Effects  （Taylor Available online 1986）
卷期: Volume 91, issue 3-4  

页码: 253-256

 

ISSN:0033-7579

 

年代: 1986

 

DOI:10.1080/00337578608227599

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Angular distributions of photons produced by 633 and 1200 MeV electrons in a silicon single crystal, 250 μmthick, have been measured at different orientation angles between the electron beam direction and the crystallographic axis ⟨111⟩. It is shown that the angular distribution of low-energy radiation of electrons moving along the ⟨111⟩ axis is narrower than that of high-energy radiation.

 

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