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CH4/H2reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors

 

作者: R. Pereira,   M. Van Hove,   W. De Raedt,   Ph. Jansen,   G. Borghs,   R. Jonckheere,   M. Van Rossum,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 1978-1980

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585391

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;MODULATION;DOPED MATERIALS;FIELD EFFECT TRANSISTORS;ETCHING;ION BEAMS;FABRICATION;ELECTRICAL PROPERTIES;HALL EFFECT;DRAIN;ELECTRIC CONDUCTIVITY;GATES

 

数据来源: AIP

 

摘要:

Pseudomorphic AlGaAs/InGaAs modulation doped field effect transistors have been fabricated by using methane/hydrogen (CH4/H2) reactive ion etching for gate recessing. Source‐drain resistance and Hall measurements on as etched and annealed samples are presented. The electrical degradation introduced by the plasma can be recovered after annealing at 400 °C. A threshold voltage (Vth) standard deviation of 14 mV over a 5 cm (2 in.) wafer was obtained.

 

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