High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
作者:
Hui Nie,
K. A. Anselm,
C. Hu,
S. S. Murtaza,
B. G. Streetman,
J. C. Campbell,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 2
页码: 161-163
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118341
出版商: AIP
数据来源: AIP
摘要:
Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75&percent;), low dark current, low bias voltage(<15V), and low multiplication noise(0.2<k<0.3). We describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. ©1997 American Institute of Physics.
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