Intersubband absorption in Si1−xGex/Si superlattices for long wavelength infrared detectors
作者:
Y. Rajakarunanayake,
T. C. McGill,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 4
页码: 929-935
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584945
出版商: American Vacuum Society
关键词: SUPERLATTICES;ABSORPTION SPECTRA;INFRARED SPECTRA;PHOTODETECTORS;BAND STRUCTURE;INTRABAND TRANSITIONS;POLARIZATION;SILICON ALLOYS;GERMANIUM ALLOYS;BINARY ALLOYS;INFRARED RADIATION;SILICON;RADIATION DETECTION;Si;(GeSi);(AlGa)As;GaAs
数据来源: AIP
摘要:
We have calculated the absorption strengths for intersubband transitions inn‐type Si1−xGex/Si superlattices. These transitions can be used for the detection of long‐wavelength infrared radiation. A significant advantage in Si1−xGex/Si superlattice detectors is the ability to detect normally incident light; in Ga1−xAlxAs/GaAs superlattices intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. We present detailed calculations of absorption coefficients, and peak absorption wavelengths for [100], [111], and [110] Si1−xGex/Si superlattices. Peak absorption strengths of about 2000–6000 cm−1were obtained for typical sheet doping concentrations (≊1012cm−2). Absorption comparable to that in Ga1−xAlxAs/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.
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