Global planarization technology based on a new concept comprised of spin on glass (SOG) film transfer and hot pressing is proposed for interlayer dielectrics. The technology basically involves coating a SOG film onto a sheet film in advance and then transferring it from the sheet film to a Si substrate by pressing and heating it in a vacuum. Planarization and filling of the interlayer dielectrics can be carried out by this process. For this technology, perhydrosilazane, which has a high viscosity for a thick formation during coating and a low viscosity for the flow during heating, is used as the SOG material. Experimental results show that the SOG thickness is reduced by the pressing and heating process and that its uniformity can be improved by the press force. By applying this technology to Al interconnection, it is found that planarization and filling can be completely realized. Therefore, this technology is very promising for simple and inexpensive global planarization.