GaAs&sngbnd;GaxAl1−xAs heterostructure lasers with amphoterically silicon‐doped active regions
作者:
F. H. Doerbeck,
D. M. Blacknall,
R. L. Carroll,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 1
页码: 529-530
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1661932
出版商: AIP
数据来源: AIP
摘要:
Amphoterically silicon‐doped GaAs heterostructure lasers were fabricated using solution epitaxial growth of GaAs and GaAlAs in a sliding boat system. LOC lasers and double‐heterostructure lasers were obtained. The emission wavelength was between 9040 and 9250 Å. Threshold current densities were typically 12–4 kA cm−2, with 2.4 kA cm−2as the lowest value observed with a double heterostructure.
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