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One‐dimensional wire formed by molecular‐beam epitaxial regrowth on a patternedpnpnpGaAs substrate

 

作者: J. H. Burroughes,   M. P. Grimshaw,   M. L. Leadbeater,   D. A. Ritchie,   M. Pepper,   G. A. C. Jones,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1277-1279

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587021

 

出版商: American Vacuum Society

 

关键词: QUANTUM WIRES;GALLIUM ARSENIDES;DOPED MATERIALS;SILICON ADDITIONS;BERYLLIUM ADDITIONS;MOLECULAR BEAM EPITAXY;P−TYPE CONDUCTORS;N−TYPE CONDUCTORS;ELECTRON GAS;CARRIER MOBILITY;GaAs:Si;GaAa:Be;(Al:Ga)As

 

数据来源: AIP

 

摘要:

We have grown high mobility one‐dimensional electron gases by molecular‐beam epitaxy (MBE) on etched GaAspnpnpfacets. By applying the appropriate bias to thep‐ andn‐GaAs layers which serve as a unique backgate, the electron gas width and mobility may be controlled. The width may be varied between about 400 and 100 nm. We also find that the mobility increases up to about 6×105cm2/V s, rather than decreases with falling carrier concentration.

 

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