A &dgr;‐dopedGaAs/In0.2Ga0.8Asp‐channel heterostructure field‐effect transistor grown by low‐pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two‐dimensional hole gas concentrations at 300 (77) K are 260 (2600)cm2/v sand 1012(5.5×1011) cm−2, respectively. For a gate length of 1.5 &mgr;m, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage. ©1995 American Institute of Physics.