The presently developed two‐stage process involves diping the prefired porous disks ofn‐BaTiO3in nonaqueous solutions containing Al‐buty rate, Ti‐isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain‐boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrati