We report observation of a rotation in the polarization of the two photorefractive recording beams in GaAs for a configuration with the internally generated space‐charge field along the ⟨110⟩ crystallographic orientation. This rotation is a result of simultaneous constructive and destructive beam coupling in each beam for the optical electric field components along the two electro‐optically induced principal dielectric axes of the crystal. By turning one of the beams on and off, the intensity of the other beam after the crystal and a polarization analyzer can be modulated by as much as 500%. This result is of particular importance for optical information processing applications.