Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2interface electrical characteristics
作者:
D. Mathiot,
A. Straboni,
E. Andre,
P. Debenest,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 12
页码: 8215-8220
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353438
出版商: AIP
数据来源: AIP
摘要:
The diffusion of boron in N2ambient is studied by usingp+polysilicon metal‐oxide‐silicon structures annealed during times long enough to allow boron diffusion through the gate oxide, up to the underlying substrate. Assuming equilibrium segregation at the interfaces, the boron diffusivity in the oxide is calculated by numerically fitting the resulting profile in the substrate. It is found that B diffuses in SiO2with an activation energy of about 3 eV. We also quantify the influence of the nitridation of the oxide, and confirm its efficiency as a diffusion barrier. However, this study reveals a strong inconsistency between the extracted diffusivity values of B in SiO2and the amount of B atoms being able to reach the Si/SiO2interface to account for the observed interface state density.
点击下载:
PDF
(707KB)
返 回