Electron beam proximity printing is a lithography method for high throughput exposure of repetitive patterns with submicron structures. An electron beam shadow projects the pattern contained in a transmission mask onto the wafer. Pattern registration in this projection printer is achieved by using the electron beam current absorbed in the wafer. Two registration steps are employed: one for wafer (or global) align, the other for chip (or local) align. The achieved registration accuracy is better than 0.1 μm using 10 keV electrons and 1.1 μm thick PMMA on the wafer registration marks.