Optical detection of light‐ and heavy‐hole resonant tunneling inp‐type resonant tunneling structures
作者:
C. Van Hoof,
G. Borghs,
E. Goovaerts,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 17
页码: 2139-2141
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106105
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence of operational AlAs‐GaAs‐AlAs double‐barrier resonant tunneling structures withp‐type contact layers reveals the charging and subsequent discharging of the hole subbands in the quantum well by sequential resonant tunneling throughout the region of the first three hole resonances. The linewidth of the quantum well luminescence shows free‐carrier broadening at each of the resonances. Accumulation and tunneling of photocreated electrons are also prominent.
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