Stability of multijunctiona‐Si:H‐based solar cells
作者:
M. S. Bennett,
K. Rajan,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 9
页码: 4161-4166
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344979
出版商: AIP
数据来源: AIP
摘要:
It is demonstrated that multijunctiona‐Si:H‐based solar cells are more stable than their single‐junction counterparts and that the stability improves as the number of junctions increases. It is further shown that the rate of degradation of multijunction devices can be explained in terms of the rates of degradation of their individualilayers. It is thus possible to predict the amount of photodegradation of multijunction devices after prolonged light soaking, knowing only the rates of degradation of single‐junction cells in terms of thei‐layer thicknesses and the intensity of the illumination to which they are exposed.
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