首页   按字顺浏览 期刊浏览 卷期浏览 Stability of multijunctiona‐Si:H‐based solar cells
Stability of multijunctiona‐Si:H‐based solar cells

 

作者: M. S. Bennett,   K. Rajan,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 9  

页码: 4161-4166

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344979

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is demonstrated that multijunctiona‐Si:H‐based solar cells are more stable than their single‐junction counterparts and that the stability improves as the number of junctions increases. It is further shown that the rate of degradation of multijunction devices can be explained in terms of the rates of degradation of their individualilayers. It is thus possible to predict the amount of photodegradation of multijunction devices after prolonged light soaking, knowing only the rates of degradation of single‐junction cells in terms of thei‐layer thicknesses and the intensity of the illumination to which they are exposed.

 

点击下载:  PDF (584KB)



返 回