Quarter‐wave semiconductor mirrors of InP‐In0.53Ga0.47As for high reflectivity at 1.65 &mgr;m wavelength are epitaxially grown using metalorganic chemical vapor deposition. Doping of the In0.53Ga0.47As layers is found to be critical for high reflectivity at wavelengths corresponding to the In0.53Ga0.47As band gap.n‐type doping reduces the band‐to‐band absorption resulting in high reflectivity whilep‐type doped mirrors show reduced reflectivity.