Replication of near 0.1 μm hole patterns by using x‐ray lithography
作者:
Yukiko Kikuchi,
Naoko Kihara,
Shinji Sugihara,
Satoshi Saitoh,
Kenzo Kondo,
Hiroshi Nomura,
Tohru Ozaki,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 4298-4302
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.589040
出版商: American Vacuum Society
关键词: Si:P
数据来源: AIP
摘要:
The feasibility of x‐ray lithography in applying device process was studied through fabrication of a small circuit consisting of experimental stacked film and contact holes numbering about 1k with replicated sizes from 0.6 to 0.085 μm. To resolve fine contact holes, in‐house chemically amplified positive resist was used by employing a high contrast post‐exposure‐bake condition. By measuring the resistance and yields of prepared circuits, we have evaluated the reliability of the circuits. High yield of larger than 0.9 was obtained for contact holes larger than 0.15 μm, and prepared circuits were found to be feasible down to 0.085 μm.
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