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High‐sensitivity read‐write volume holographic storage in Bi12SiO20and Bi12GeO20crystals

 

作者: J. P. Huignard,   F. Micheron,  

 

期刊: Applied Physics Letters  (AIP Available online 1976)
卷期: Volume 29, issue 9  

页码: 591-593

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89153

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Bi12SiO20and Bi12GeO20present the best known photorefractive sensitivity for read‐write volume holographic storage (S−1≃300 &mgr;J/cm2) combined with high‐quality image reconstruction. Recording processes by photocarrier diffusion (no applied field) and by photocarrier drift are identified. The high photosensitivity is attributed to photocarrier displacements comparable to or larger than fringe spacings. Saturation diffraction efficiency at light power densities larger than 600&mgr;W/cm2at &lgr;=514.5 nm occurs from complete photocarrier trap filling.

 

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