High‐sensitivity read‐write volume holographic storage in Bi12SiO20and Bi12GeO20crystals
作者:
J. P. Huignard,
F. Micheron,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 9
页码: 591-593
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.89153
出版商: AIP
数据来源: AIP
摘要:
Bi12SiO20and Bi12GeO20present the best known photorefractive sensitivity for read‐write volume holographic storage (S−1≃300 &mgr;J/cm2) combined with high‐quality image reconstruction. Recording processes by photocarrier diffusion (no applied field) and by photocarrier drift are identified. The high photosensitivity is attributed to photocarrier displacements comparable to or larger than fringe spacings. Saturation diffraction efficiency at light power densities larger than 600&mgr;W/cm2at &lgr;=514.5 nm occurs from complete photocarrier trap filling.
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