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Molecular‐beam epitaxy growth and uniformity test of modulation‐doped Al0.3Ga0.7As/GaAs heterostructure on 4‐in. diameter GaAs(100)

 

作者: K. Yang,   K. C. So,   A. P. Taylor,   L. J. Schowalter,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 5  

页码: 2548-2550

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585690

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;MOLECULAR BEAM EPITAXY;MODULATED MATERIALS;THIN FILMS;HETEROSTRUCTURES;HOMOGENEITY;GaAs;(AlGa)As

 

数据来源: AIP

 

摘要:

A modulation‐doped Al0.3Ga0.7As/GaAs film with high mobility (11×104cm2/V s at 77 K) has been grown on a 4‐in. diam GaAs (100) substrate in a MBE system from Vacuum Generators. The variations of electrical parameters and thickness over the wafer are about ±2%, indicating good uniformities. The flux transient variations which influence the uniformity of stoichiometry in the growth direction are also investigated.

 

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