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Boron ion implantation inp‐type Hg0.8Cd0.2Te

 

作者: R. Kumar,   M. B. Dutt,   R. Nath,   R. Chander,   S. C. Gupta,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 11  

页码: 5564-5566

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.347016

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Differential Hall measurements at 77 K were done on 150‐keV boron implantedp‐type mercury‐cadmium‐telluride (HgCdTe).n+layers formed as a result of implantation with various doses were very sharp and thicknesses of then+layers were found to depend on boron dose. The sheet carrier concentration tends to saturate above the dose 1×1013cm−2.

 

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