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Optical bistability in semiconductor injection lasers

 

作者: J.G.McLnerney,   D.M.Heffernan,   D.M.Heffernan,  

 

期刊: IEE Proceedings J (Optoelectronics)  (IET Available online 1987)
卷期: Volume 134, issue 1  

页码: 41-50

 

年代: 1987

 

DOI:10.1049/ip-j.1987.0009

 

出版商: IEE

 

数据来源: IET

 

摘要:

This paper reviews optical bistability in semiconductor lasers, with particular reference to the potential switching speeds of the systems demonstrated to date. Devices which switch by redistributing a nearly constant number of carriers within the active region should be faster, although less stable, than systems whose transitions are attended by large changes in carrier numbers. One system of the former type, the self-focused coupled cavity laser, is analysed in some detail and is compared with the twin-stripe laser and the Fabry-Perot laser amplifier.

 

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