Optical bistability in semiconductor injection lasers
作者:
J.G.McLnerney,
D.M.Heffernan,
D.M.Heffernan,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1987)
卷期:
Volume 134,
issue 1
页码: 41-50
年代: 1987
DOI:10.1049/ip-j.1987.0009
出版商: IEE
数据来源: IET
摘要:
This paper reviews optical bistability in semiconductor lasers, with particular reference to the potential switching speeds of the systems demonstrated to date. Devices which switch by redistributing a nearly constant number of carriers within the active region should be faster, although less stable, than systems whose transitions are attended by large changes in carrier numbers. One system of the former type, the self-focused coupled cavity laser, is analysed in some detail and is compared with the twin-stripe laser and the Fabry-Perot laser amplifier.
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