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Oxide breakdown in a metal-SiO2-Si capacitor: influence of the metal electrode

 

作者: G.Sarrabayrouse,   J.L.Prom,   K.Kassmi,  

 

期刊: IEE Proceedings G (Circuits, Devices and Systems)  （IET Available online 1990）
卷期: Volume 137, issue 6  

页码: 475-478

 

年代: 1990

 

DOI:10.1049/ip-g-2.1990.0073

 

出版商: IEE

 

数据来源: IET

 

摘要:

The influence of the metal electrode, size, type and thickness on the breakdown field strength of a metal-SiO2-Si capacitor with an insulating layer less than 100 Å thick is investigated. The results are interpreted in terms of stress at the SiO2-Si interface.

 

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