The recombination kinetics of charged carriers in GaAs have been investigated on a picosecond time scale. A pump‐probe technique was used to measure reflectivity changes as a function of time up to 900 ps. Initially, (1.2±0.2)×1020carriers/cm3were excited into the conduction band. The decay curve indicated dominance of a three‐body (Auger) recombination process up to about 120 ps, with two‐body recombination processes dominating after 120 ps, the switch occurring at a carrier concentration of (5±2)×1019carriers/cm3. Values for the Auger recombination coefficient and the two‐body recombination coefficient were determined to be (7±4)×10−31cm6 s−1and (3.4±1.7)×10−11cm3 s−1, respectively. The change in reflectance was observed to have essentially returned to zero within 900 ps.