Electrical properties of proton and deuterium ion implantedn‐type GaAs
作者:
H. B. Harrison,
A. L. Martin,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 5
页码: 2935-2936
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327967
出版商: AIP
数据来源: AIP
摘要:
Carrier removal inn‐type GaAs induced by proton and deuterium bombardment has been investigated using capacitance‐voltage profiling techniques. It is shown that deuterium offers advantages over hydrogen implantation, that ’’cold’’ (30 K) implants are superior to room temperature implants, and that carrier removal depth appears to be dose dependent, or dose and dose rate dependent.
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