Twin-source plasma chemical vapor deposition for high rate deposition ofSiO2films
作者:
Ryozo Nonogaki,
Shinji Nakai,
Suzuya Yamada,
Tetsuya Wada,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1998)
卷期:
Volume 16,
issue 5
页码: 2827-2831
ISSN:0734-2101
年代: 1998
DOI:10.1116/1.581427
出版商: American Vacuum Society
关键词: SiO2
数据来源: AIP
摘要:
A twin-source plasma chemical vapor deposition (p-CVD) method has been designed and tested for high rate deposition ofSiO2films. In the p-CVD system, two kinds of source gases are decomposed in the plasma generators independently, and then introduced onto the substrate. The gas in front of the substrate is excited successively by a third plasma generated by coupling of rf power into the electrode just below the substrate. The films were formed at room temperature. The setup increased the collision probability of reactiveO*andSiHx*,and a high deposition rate of 1.9 μm/min was achieved by the high density of the precursors.
点击下载:
PDF
(111KB)
返 回