Interband transitions in InxGa1−xAs/GaAs strained layer superlattices
作者:
U. K. Reddy,
G. Ji,
T. Henderson,
D. Huang,
R. Houdré,
H. Morkoç,
Cole W. Litton,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1989)
卷期:
Volume 7,
issue 5
页码: 1106-1110
ISSN:0734-211X
年代: 1989
DOI:10.1116/1.584559
出版商: American Vacuum Society
关键词: SUPERLATTICES;STRAINS;DEFORMATION;INTERBAND TRANSITIONS;INDIUM ARSENIDES;GALLIUM ARSENIDES;THIN FILMS;MEDIUM TEMPERATURE;REFLECTIVITY;MOLECULAR BEAM EPITAXY;OPTICAL PROPERTIES;GaAs;(Ga,In)As
数据来源: AIP
摘要:
Room‐temperature photoreflectance (PR) measurements have been used to investigate the optical transition energies in InxGa1−xAs/GaAs strained layer superlattice structures grown by molecular‐beam epitaxy (MBE). Sharp PR features indicating excellent optical quality of these MBE grown structures were observed. The transition energies were calculated and PR spectra fitted to the theoretical line shape expression. By observing the variation of Cl‐Lbl (where Cl is the first conduction subband in InGaAs layers and Lbl is the first light‐hole subband in the GaAs layers) type II superlattice transition, which cannot be observed with photoluminescence even at low temperatures, a conduction‐band discontinuity of 70% was obtained. Further, an important outcome of this study is the observation of strong PR features from the spatially indirect Cl‐Lbl transition which indicates that the modulation of band to band transitions can be a dominant PR line shape determining mechanism.
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