Hall‐effect determination of the N‐trap bound state in GaAs1−xPx
作者:
L. J. van Ruyven,
H. J. A. Bluyssen,
R. W. van der Heijden,
T. B. Tan,
H. I. Ralph,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 10
页码: 685-687
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89504
出版商: AIP
数据来源: AIP
摘要:
Hall‐effect measurements as a function of temperature on nitrogen‐containing GaAs1−xPxhave shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free‐carrier density. Our results are in excellent agreement with recent optical data.
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