Titanium–silicon–nitride films were grown by metal-organic chemical vapor deposition. At temperatures between 300 and 450 °C, tetrakis(diethylamido)titanium, ammonia, and silane react to form films with average compositions near theTiN–Si3N4tie line and low impurity contents(C<1.5 at. &percent;,H between 5 and 15 at. &percent;, with no other impurities present). The film resistivity is a strong function of Si content in the films, ranging continuously from 400 &mgr;&OHgr; cm for pure TiN up to 1 &OHgr; cm for films with 25 at. &percent; Si. Step coverages of approximately 75&percent; on 0.35 &mgr;m, 3:1 aspect ratio trenches, and 35&percent;–40&percent; on0.1 &mgr;m/10:1trenches are found for films with resistivities below 1000 &mgr;&OHgr; cm. These films are promising candidates for diffusion barriers in microelectronic applications. ©1997 American Institute of Physics.